Ilia Valov
Ilia Valov
Research Centre Juelich, RWTH-Aachen
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Cited by
Cited by
Electrochemical metallization memories—fundamentals, applications, prospects
I Valov, R Waser, JR Jameson, MN Kozicki
Nanotechnology 22 (25), 254003, 2011
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Y Yang, P Gao, L Li, X Pan, S Tappertzhofen, SH Choi, R Waser, I Valov, ...
Nature communications 5 (1), 4232, 2014
Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
A Wedig, M Luebben, DY Cho, M Moors, K Skaja, V Rana, T Hasegawa, ...
Nature nanotechnology 11 (1), 67-74, 2016
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Nanobatteries in redox-based resistive switches require extension of memristor theory
I Valov, E Linn, S Tappertzhofen, S Schmelzer, J van den Hurk, F Lentz, ...
Nature communications 4 (1), 1771, 2013
2022 roadmap on neuromorphic computing and engineering
DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ...
Neuromorphic Computing and Engineering 2 (2), 022501, 2022
Multibit memory operation of metal-oxide bi-layer memristors
S Stathopoulos, A Khiat, M Trapatseli, S Cortese, A Serb, I Valov, ...
Scientific reports 7 (1), 17532, 2017
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
Effects of moisture on the switching characteristics of oxide‐based, gapless‐type atomic switches
T Tsuruoka, K Terabe, T Hasegawa, I Valov, R Waser, M Aono
Advanced Functional Materials 22 (1), 70-77, 2012
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
I Valov, I Sapezanskaia, A Nayak, T Tsuruoka, T Bredow, T Hasegawa, ...
Nature materials 11 (6), 530-535, 2012
Generic relevance of counter charges for cation-based nanoscale resistive switching memories
S Tappertzhofen, I Valov, T Tsuruoka, T Hasegawa, R Waser, M Aono
ACS nano 7 (7), 6396-6402, 2013
Cation-based resistance change memory
I Valov, MN Kozicki
Journal of Physics D: Applied Physics 46 (7), 074005, 2013
A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide
L Nagarajan, RA De Souza, D Samuelis, I Valov, A Börger, J Janek, ...
Nature materials 7 (5), 391-398, 2008
Switching kinetics of electrochemical metallization memory cells
S Menzel, S Tappertzhofen, R Waser, I Valov
Physical Chemistry Chemical Physics 15 (18), 6945-6952, 2013
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ...
Advanced materials 30 (43), 1801187, 2018
Redox‐based resistive switching memories (ReRAMs): Electrochemical systems at the atomic scale
I Valov
ChemElectroChem 1 (1), 26-36, 2014
Quantum conductance and switching kinetics of AgI-based microcrossbar cells
S Tappertzhofen, I Valov, R Waser
Nanotechnology 23 (14), 145703, 2012
Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures
T Tsuruoka, I Valov, S Tappertzhofen, J Van Den Hurk, T Hasegawa, ...
Advanced functional materials 25 (40), 6374-6381, 2015
Standards for the characterization of endurance in resistive switching devices
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices.
M Lübben, P Karakolis, V Ioannou-Sougleridis, P Normand, P Dimitrakis, ...
Advanced Materials (Deerfield Beach, Fla.) 27 (40), 6202-6207, 2015
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