Hangbing Lv
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Real‐time observation on dynamic growth/dissolution of conductive filaments in oxide‐electrolyte‐based ReRAM
Q Liu, J Sun, H Lv, S Long, K Yin, N Wan, Y Li, L Sun, M Liu
Advanced Materials 24 (14), 1844, 2012
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode
Q Liu, S Long, H Lv, W Wang, J Niu, Z Huo, J Chen, M Liu
ACS nano 4 (10), 6162-6168, 2010
Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology
H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu
Advanced Functional Materials 24 (36), 5679-5686, 2014
An artificial neuron based on a threshold switching memristor
X Zhang, W Wang, Q Liu, X Zhao, J Wei, R Cao, Z Yao, X Zhu, F Zhang, ...
IEEE Electron Device Letters 39 (2), 308-311, 2017
Reproducible unipolar resistance switching in stoichiometric ZrO2 films
X Wu, P Zhou, J Li, LY Chen, HB Lv, YY Lin, TA Tang
Applied Physics Letters 90 (18), 2007
Breaking the current‐retention dilemma in cation‐based resistive switching devices utilizing graphene with controlled defects
X Zhao, J Ma, X Xiao, Q Liu, L Shao, D Chen, S Liu, J Niu, X Zhang, ...
Advanced materials 30 (14), 1705193, 2018
Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.
S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long, Q Li, Q Liu, M Liu
Advanced Materials (Deerfield Beach, Fla.) 28 (48), 10623-10629, 2016
Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials
Y Li, S Long, Q Liu, H Lv, M Liu
Small 13 (35), 1604306, 2017
Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
Q He, W Mu, H Dong, S Long, Z Jia, H Lv, Q Liu, M Tang, X Tao, M Liu
Applied Physics Letters 110 (9), 2017
Confining cation injection to enhance CBRAM performance by nanopore graphene layer
X Zhao, S Liu, J Niu, L Liao, Q Liu, X Xiao, H Lv, S Long, W Banerjee, W Li, ...
Small 13 (35), 1603948, 2017
Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2Thin Films
R Cao, Y Wang, S Zhao, Y Yang, X Zhao, W Wang, X Zhang, H Lv, Q Liu, ...
IEEE Electron Device Letters 39 (8), 1207-1210, 2018
A highly CMOS compatible hafnia-based ferroelectric diode
Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ...
Nature communications 11 (1), 1391, 2020
Emulating short-term and long-term plasticity of bio-synapse based on Cu/a-Si/Pt memristor
X Zhang, S Liu, X Zhao, F Wu, Q Wu, W Wang, R Cao, Y Fang, H Lv, ...
IEEE Electron Device Letters 38 (9), 1208-1211, 2017
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory
H Lv, X Xu, H Liu, R Liu, Q Liu, W Banerjee, H Sun, S Long, L Li, M Liu
Scientific reports 5 (1), 1-6, 2015
Conductance quantization in resistive random access memory
Y Li, S Long, Y Liu, C Hu, J Teng, Q Liu, H Lv, J Su, M Liu
Nanoscale research letters 10, 1-30, 2015
Thermal crosstalk in 3-dimensional RRAM crossbar array
P Sun, N Lu, L Li, Y Li, H Wang, H Lv, Q Liu, S Long, S Liu, M Liu
Scientific reports 5 (1), 13504, 2015
An overview of resistive random access memory devices
YT Li, SB Long, Q Liu, HB L, S Liu, M Liu
Chinese Science Bulletin 56, 3072-3078, 2011
Oxide‐based electrolyte‐gated transistors for spatiotemporal information processing
Y Li, J Lu, D Shang, Q Liu, S Wu, Z Wu, X Zhang, J Yang, Z Wang, H Lv, ...
Advanced Materials 32 (47), 2003018, 2020
Review of deep ultraviolet photodetector based on gallium oxide
Y Qin, S Long, H Dong, Q He, G Jian, Y Zhang, X Hou, P Tan, Z Zhang, ...
Chinese Physics B 28 (1), 018501, 2019
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