| Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono nature 432 (7016), 488-492, 2004 | 8693 | 2004 |
| Amorphous Oxide And Thin Film Transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent App. 10/592,431, 2007 | 3904 | 2007 |
| Display H Kumomi, H Hosono, T Kamiya, K Nomura US Patent 7,791,072, 2010 | 3815 | 2010 |
| Integrated circuits utilizing amorphous oxides K Abe, H Hosono, T Kamiya, K Nomura US Patent 7,863,611, 2011 | 3787 | 2011 |
| Light-emitting device T Den, T Iwasaki, H Hosono, T Kamiya, K Nomura US Patent 7,872,259, 2011 | 3783 | 2011 |
| Amorphous oxide and field effect transistor M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura US Patent App. 11/269,600, 2006 | 3778 | 2006 |
| Field effect transistor M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura US Patent 7,868,326, 2011 | 3769 | 2011 |
| Field effect transistor manufacturing method H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura US Patent 7,829,444, 2010 | 3765 | 2010 |
| Sensor and image pickup device K Saito, H Hosono, T Kamiya, K Nomura US Patent 7,453,065, 2008 | 3748 | 2008 |
| Amorphous oxide and thin film transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent 10,032,930, 2018 | 3724 | 2018 |
| Amorphous oxide and thin film transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent App. 12/504,158, 2009 | 3721 | 2009 |
| Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono Science 300 (5623), 1269-1272, 2003 | 3056 | 2003 |
| Present status of amorphous In–Ga–Zn–O thin-film transistors T Kamiya, K Nomura, H Hosono Science and Technology of Advanced Materials, 2010 | 2138 | 2010 |
| Amorphous oxide semiconductors for high-performance flexible thin-film transistors K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono Japanese journal of applied physics 45 (5S), 4303, 2006 | 1501 | 2006 |
| High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering H Yabuta, M Sano, K Abe, T Aiba, T Den, H Kumomi, K Nomura, T Kamiya, ... Applied physics letters 89 (11), 2006 | 1429 | 2006 |
| Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3 H Ohta, SW Kim, Y Mune, T Mizoguchi, K Nomura, S Ohta, T Nomura, ... Nature materials 6 (2), 129-134, 2007 | 1145 | 2007 |
| Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3 (ZnO) 5 films K Nomura, T Kamiya, H Ohta, K Ueda, M Hirano, H Hosono Applied Physics Letters 85 (11), 1993-1995, 2004 | 971 | 2004 |
| Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura US Patent 7,601,984, 2009 | 932 | 2009 |
| Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping T Kamiya, K Nomura, H Hosono Journal of display Technology 5 (7), 273-288, 2009 | 924 | 2009 |
| p-channel thin-film transistor using p-type oxide semiconductor, SnO Y Ogo, H Hiramatsu, K Nomura, H Yanagi, T Kamiya, M Hirano, H Hosono Applied Physics Letters 93 (3), 2008 | 771 | 2008 |
